System for High Apect Ratio Etch consisting of mainframe and process chambers (IPMS-CNT05.1) - PR1153448-2480-P
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System for High Apect Ratio Etch consisting of mainframe and process chambers (IPMS-CNT05.1) System for High Apect Ratio Etch consisting of mainframe and process chambers (IPMS-CNT05.1)
Dresden, 01109, Dresden, Germany
1 Stück System for High Apect Ratio Etch consisting of mainframe and process chambers (IPMS-CNT05.1) Die Spezifikation beschreibt die Anforderungen an ein vollautomatisches Prozessgerät, das für Plasmaätzprozesse auf Wafern mit einem Durchmesser von 300 mm eingesetzt werden soll. Die Systeme werden für die Bearbeitung von Silizium-CMOS-Wafern in einer Produktionsumgebung der Reinraumklasse 1000 (entspricht in etwa Klasse 6 nach EN ISO 14644-1) eingesetzt. Das neue Werkzeug soll zur Strukturierung von Strukturen mit hohem Aspektverhältnis in Silizium sowie in allen damit verbundenen erforderlichen Materialien (z. B. SiO₂, SiN) eingesetzt werden, um dieses Hauptziel zu erreichen. Optionale Positionen gemäß Technical Tender Specification. 1 Piece: System for High Apect Ratio Etch consisting of mainframe and process chambers (IPMS-CNT05.1) A fully automated process tool to be used for plasma etch processes on wafers with a diameter of 300 mm. The systems will be used for the processing of Silicon CMOS wafers in a cleanroom class 1000 (approximately class 6 EN ISO 14644-1) production environment. The new tool shall be used for patterning of high aspect ratio features in silicon as well as all related needed materials (e.g. SiO2, SiN) to reach this main target. Optional items according to Technical Tender Specification.
Dresden, 01109, Dresden, Germany