CMP-System für 100/150‑mm‑Wafer (IAF-03) - PR1199438-2050-P
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CMP-System für 100/150‑mm‑Wafer (IAF-03) CMP-System 100/150‑mm‑Wafer (IAF-03)
Tullastr. 72, Freiburg, 79108, Freiburg im Breisgau, Germany
1 CMP-System zur chemisch-mechanischen Politur dielektrischer Schichten wie Siliziumoxid auf 100‑mm- und 150‑mm-Si- und III-V-Halbleiterwafern mit integrierter Reinigung und optischer Endpunkterkennung. Ziel des Polierens ist die Planarisierung und Verbesserung der Oberflächenrauheit, um ein anschließendes Wafer-Fusionsbonden von III-V-Halbleitern mit Si-Wafern zu ermöglichen. Option 1: Separate drainage lines for DI water and chemicals Option 2: SECS/GEM interface Option 3: Torque EPD "CMP system for the chemical-mechanical polishing of dielectric layers such as silicon oxide on 100 mm and 150 mm Si and III-V semiconductor wafers with integrated cleaning and optical endpoint detection. The purpose of polishing is to achieve surface planarization and improve surface roughness in order to enable subsequent wafer fusion bonding of III-V semiconductors with Si wafers. " Option 1: Separate drainage lines for DI water and chemicals Option 2: SECS/GEM interface Option 3: Torque EPD
Tullastr. 72, Freiburg, 79108, Freiburg im Breisgau, Germany
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